| PART |
Description |
Maker |
| SLD104AV |
GaAlAs Laser Diode Developed For CD(镓铝砷激光二极管(用于CD播放)
|
Sony Corporation
|
| HL8338MG HL8337MG |
GaAlAs Laser Diode
|
OPNEXT[Opnext. Inc.]
|
| HL8325G |
GaAlAs Laser Diode
|
OPNEXT[Opnext. Inc.]
|
| HL7852G |
GaAlAs Laser Diode
|
OPNEXT[Opnext. Inc.]
|
| SLD105VL |
GaAlAs Laser Diode For Portable CD(镓铝砷激光二极管(用于随身CD)) 发动器激光二极管便携CD（镓铝砷激光二极管（用于随身光盘）
|
Sony, Corp.
|
| NX6350EP27-AZ |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
|
California Eastern Labs
|
| NX8349YK |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
|
California Eastern Labs
|
| NX7337BF-AA |
LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX7437 |
LASER DIODE 1 490 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| SLD324ZT-21 SLD324ZT |
High-Power Density 2W Laser Diode
798 nm, LASER DIODE M-272, 12 PIN
|
SONY
NXP Semiconductors N.V.
|
| NX8346TB |
LASER DIODE 1310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
